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上海瀾芯半導體有限公司
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SiC MOSFET晶圓
LXPSEMI SiC MOSFET在導通電阻,開關損耗,高溫運行和導熱性上的優(yōu)異特性極大地提升了電力電子系統(tǒng)的轉(zhuǎn)換效率和功率密度,并使得系統(tǒng)的整體成本降低。瀾芯半導體碳化硅MOSFET具有750V至1700V的擴展電壓范圍,采用先進的工藝技術平臺,具有杰出的開關性能和極低的單位面積導通電阻。
瀾芯半導體SiC MOSFET:
1.汽車級和工業(yè)級合格器件;
2.高結溫能力(TJ = 175°C,最高200°C);
3.超高開關工作頻率和極低開關損耗;
4.低導通電阻;
5.柵極驅(qū)動可兼容現(xiàn)有IC;
6.穩(wěn)定的超快速本體二極管。
我們的SiC MOSFET圓片產(chǎn)品包括裸晶圓或卷帶包裝Bare Dies。
瀾芯SiC MOSFET專為滿足汽車和工業(yè)應用的嚴格要求而設計。
瀾芯半導體SiC MOSFET主要特點包括:
1200V SiC MOSFET晶圓產(chǎn)品

Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

Junction Temperature

Spice

Model

LX1C080N120B


Mass ProductG1(Good EMI)Wafer Dicing1200V80mΩ29AIndustrial175°C

LX1C040N120B


Mass ProductG1(Good EMI)Wafer Dicing1200V40mΩ59AIndustrial175°C

LX2C080N120B


Mass ProductG2(Fast)Wafer Dicing1200V80mΩ27AIndustrial175°C

LX2C060N120B


Mass ProductG2(Fast)Wafer Dicing1200V60mΩ35AIndustrial175°C

LX2C030N120B


Mass ProductG2(Fast)Wafer Dicing1200V30mΩ72AIndustrial175°C

LX2C014N120B


Mass ProductG2(Fast)Reel Tape1200V14mΩ149AIndustrial175°C

LX2C012N120A


Mass ProductG2(Fast)Reel Tape1200V12mΩ168AIndustrial175°C













Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

Junction Temperature

Spice

Model

LX1C080N120B


Mass ProductG1(Good EMI)Wafer Dicing1200V80mΩ29AIndustrial175°C

LX1C040N120B


Mass ProductG1(Good EMI)Wafer Dicing1200V40mΩ59AIndustrial175°C

LX2C080N120B


Mass ProductG2(Fast)Wafer Dicing1200V80mΩ25AIndustrial175°C

LX2C060N120B


Mass ProductG2(Fast)Wafer Dicing1200V60mΩ35AIndustrial175°C

LX2C030N120B


Mass ProductG2(Fast)Wafer Dicing1200V30mΩ70AIndustrial175°C

LX2C014N120B


Mass ProductG2(Fast)Reel Tape1200V14mΩ150AIndustrial175°C

LX2C012N120A


Mass ProductG2(Fast)Reel Tape1200V12mΩ176AIndustrial175°C













750V SiC MOSFET晶圓產(chǎn)品

Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

JunctioTemperature

Spice

Model

LX2C009N075B


2024 MPG2(Fast)Reel Tape750V9.5mΩ250AIndustrial175°C

LX2C011N075B


2024 MPG2(Fast)Reel Tape750V11mΩ200AIndustrial175°C

LX2C025N075B


2024 MPG2(Fast)Wafer Dicing750V25mΩ100AIndustrial175°C

LX2C048N075B


2024 MPG2(Fast)Wafer Dicing750V48mΩ38AIndustrial175°C

LX2C065N075B


2024 MPG2(Fast)Wafer Dicing750V65mΩ45AIndustrial175°C













Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

Junction Temperature

Spice

Model

LX2C009N075B


2024 MPG2(Fast)Reel Tape750V9.5mΩ250AIndustrial175°C

LX2C011N075B


2024 MPG2(Fast)Reel Tape750V11mΩ200AIndustrial175°C

LX2C025N075B


2024 MPG2(Fast)Wafer Dicing750V25mΩ100AIndustrial175°C

LX2C048N075B


2024 MPG2(Fast)Wafer Dicing750V48mΩ38AIndustrial175°C

LX2C065N075B


2024 MPG2(Fast)Wafer Dicing750V65mΩ45AIndustrial175°C













1700V SiC MOSFET晶圓產(chǎn)品

Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

JunctioTemperature

Spice

Model

LX2C015N170B


2024 MPG2(Fast)Wafer Dicing1700V15mΩ100AIndustrial175°C

LX2C017N170B


2024 MPG2(Fast)Wafer Dicing1700V17mΩ88AIndustrial175°C

LX2C036N170B


2024 MPG2(Fast)Wafer Dicing1700V36mΩ75AIndustrial175°C

LX2C1k0N170B


2024 MPG2(Fast)Wafer Dicing1700V1000mΩ6AIndustrial175°C

LX2C3k0N170B


2024 MPG2(Fast)Wafer Dicing1700V3000mΩ4AIndustrial175°C













Products

Data

Sheet

product

 Status

TechnologyPackageVDS Max

Typ.RDS(on)

@25°C

Max IDS

@25°C 

Qualification

Junction Temperature

Spice

Model

LX2C015N170B


2024 MPG2(Fast)Wafer Dicing1700V15mΩ100AIndustrial175°C

LX2C017N170B


2024 MPG2(Fast)Wafer Dicing1700V17mΩ88AIndustrial175°C

LX2C036N170B


2024 MPG2(Fast)Wafer Dicing1700V36mΩ75AIndustrial175°C

LX2C1k0N170B


2024 MPG2(Fast)Wafer Dicing1700V1000mΩ6AIndustrial175°C

LX2C3k0N170B


2024 MPG2(Fast)Wafer Dicing1700V3000mΩ4AIndustrial175°C